PART |
Description |
Maker |
IRFI9530G IRFI9530GPBF |
-100V Single P-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package Power MOSFET(Vdss=-100V, Rds(on)=0.30ohm, Id=-7.7A)
|
IRF[International Rectifier]
|
IRFD110 |
Power MOSFET(Vdss=100V, Rds(on)=0.54ohm, Id=1.0A) 功率MOSFET(减振钢板基本\u003d 100V的,的Rds(on)\u003d 0.54ohm,身份证\u003d 1.0安培 Power MOSFET(Vdss=100V/ Rds(on)=0.54ohm/ Id=1.0A) 100V Single N-Channel HEXFET Power MOSFET in a HEXDIP package
|
International Rectifier, Corp. IRF[International Rectifier]
|
2SD2195 2SD1867 2SD1980 2SD2398 |
Power Transistor(????朵?绠? Transistors Power Transistor (100V 2A) Power Transistor (100V / 2A) Power Transistor (100V , 2A) 功率晶体管(100V的,2A
|
Rohm CO.,LTD. ROHM[Rohm] Rohm Co., Ltd.
|
IRF5Y1310CM |
100V Single N-Channel Hi-Rel MOSFET in a TO-257AA package THRU-HOLE (TO-257AA) 100V, N-CHANNEL POWER MOSFET N-CHANNEL(Vdss=100V, Rds(on)=0.044ohm, Id=18A*)
|
IRF[International Rectifier]
|
IRF5Y9540CM |
-100V Single P-Channel Hi-Rel MOSFET in a TO-257AA package THRU-HOLE (TO-257AA) 100V, P-CHANNEL POWER MOSFET P-CHANNEL(Vdss=-100V, Rds(on)=0.117ohm, Id=-18A)
|
International Rectifier
|
IRF5210 |
-100V Single P-Channel HEXFET Power MOSFET in a TO-220AB package Power MOSFET(Vdss=-100V Rds(on)=0.06ohm Id=-40A) Power MOSFET(Vdss=-100V, Rds(on)=0.06ohm, Id=-40A) Power MOSFET(Vdss=-100V/ Rds(on)=0.06ohm/ Id=-40A)
|
IRF[International Rectifier]
|
IRFL4310 IRFL4310TR |
HEXFET? Power MOSFET 1.6 A, 100 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-261AA Power MOSFET(Vdss=100V, Rds(on)=0.20ohm, Id=1.6A) 100V Single N-Channel HEXFET Power MOSFET in a SOT-223 package
|
IRF[International Rectifier]
|
IRFR9110TRL IRFU9110 IRFR9110 |
-100V Single P-Channel HEXFET Power MOSFET in a I-Pak package Power MOSFET(Vdss=-100V, Rds(on)=1.2ohm, Id=-3.1A) HEXFET? Power MOSFET
|
IRF[International Rectifier]
|
IRF5Y540CM |
100V Single N-Channel Hi-Rel MOSFET in a TO-257AA package THRU-HOLE (TO-257AA) 100V, N-CHANNEL POWER MOSFET N-CHANNEL(Vdss=100V Rds(on)=0.058ohm Id=18A*) POWER MOSFET N-CHANNEL(Vdss=100V, Rds(on)=0.058ohm, Id=18A*)
|
IRF[International Rectifier]
|
TSD4M150 TSD4M150F TSD4M150V |
V(ds): 100V; V(dgr): 100V; V(gs): -20V; 500W; I(d): 135A; N-channel enhancement mode ISOFET power MOS transistor module. For DC-DC & DC-AC converters, SMPS & UPS, motor control, output storage for PWM, ultrasonic circuits
|
SGS Thomson Microelectronics STMicroelectronics ST Microelectronics
|
DXT2013P5-13 DXT2013P5 DXT2013P5-15 |
100V PNP MEDIUM POWER TRANSISTOR PowerDI垄莽5 100V PNP MEDIUM POWER TRANSISTOR PowerDI庐5 100V PNP MEDIUM POWER TRANSISTOR PowerDI?5
|
Diodes Incorporated
|